data sheet caution observe precautions when handling because these devices are sensitive to electrostatic discharge. the infor ma ti on in this document is su b je c t to change with o ut notice. be fore usi ng this document, p le as e confirm that this is the la tes t ver si o n. npn silicon rf t ra nsistor ne68518 / 2SC5015 npn epitaxial silicon rf transistor for high-frequency low-noise amplification 4-pin super minimold (18) doc ume nt no. pu 1040 3ej01v0ds (1st edition) (p re vi ou s no. p 1039 4ej2v0ds00) date publis he d j un e 200 3 cp(k) the mark shows major re vised points. features ? h ig h f t : f t = 12 ghz typ. @ v ce = 3 v, i c = 10 ma, f = 2 ghz ? low no ise an d hig h ga in ? low volt ag e oper ation ? 4-pi n s upe r minim ol d (18 ) pac kage ordering informa ti on mrof gniylppus ytitnauq rebmun trap ne68518-a 2sc 5015-a 50 pcs (no n re el) ? 8 mm wide embossed taping ne68518-t1-a 2sc 5015-t1-a 3 kpcs/ re el ? pin 3 (base), pin 4 (emitt er ) face the pe rf or ation side o f the tape r em ark to orde r ev alu at io n sam ple s, co ntact y ou r near by s al es office. the un it sam pl e qua ntity is 50 pc s. absolute maximum ratings (t a = +25 c) p ar ameter symbol ratings unit collector to base voltage v cbo 9 v collector to emitter voltage v ceo 6 v emitter to base voltage v ebo 2 v i tnerruc rotcelloc c 30 ma total po we r dissipation p tot 150 mw junction tem per ature t j 150 c st orag e tem per ature t stg ? 65 to +150 c jeita part no.
d a t a s hee t p u 10403 e j 0 1 v 0 d s 2 2 ne68518 / s c 501 5 electrical characteristics (t a = + 2 5 c) p ara m e t e r s y m b o l t e st cond i t i o n s m i n . t y p . m a x . u n i t d c chara c t e r i s t i c s c o l l e c t o r c u t - o f f c u r r e n t i c bo v c b = 5 v , i e = 0 m a ? ? 0 . 1 a e m i t t e r c u t - o f f c u r r e n t i ebo v eb = 1 v , i c = 0 m a ? ? 0 . 1 a d c curren t g a i n h f e n o t e 1 v c e = 3 v , i c = 1 0 m a 7 5 ? 1 5 0 ? r f chara c t e r i s t i c s g a i n b andw i d t h p r odu c t f t v c e = 3 v , i c = 1 0 m a , f = 2 g h z ? 1 2 ? g h z i n s e r t i o n p ower g a i n ? s 2 1 e ? 2 v c e = 3 v , i c = 1 0 m a , f = 2 g h z 9 1 1 ? d b v f n e r u g i f e s i o n c e = 3 v , i c = 3 m a , f = 2 g h z ? 1 . 5 2 . 5 d b r e v e r s e t ran s f e r capa c i t a n c e c re n o t e 2 v c b = 3 v , i e = 0 m a , f = 1 m h z ? 0 . 3 0 . 5 p f n o tes 1 . p u l s e m eas ure m e n t : p w 350 s , d u t y c y c l e 2 % 2 . c olle c t o r t o b a s e c apac i t ance w hen t h e e m i t t e r grounde d h f e classification ran k k b m a r k i n g t 8 3 h f e v a l u e 7 5 t o 1 5 0
d a t a s hee t p u 10403 e j 0 1 v 0 d s 3 2 s c 501 5 typical characteristics (t a = + 2 5 c, unless ot herw ise specif ied) 250 200 150 100 50 0 25 50 75 100 125 150 total power dissipation p tot (mw) ambient temperature t a (?c) total power dissipation vs. ambient temperature collector current i c (ma) collector to emitter voltage v ce (v) collector current vs. collector to emitter voltage 30 15 10 25 20 5 6 2 0 8 4 i b = 20 a 80 a 60 a 40 a 100 a 120 a 140 a 160 a 180 a 200 a f = 1 m h z reverse transfer capacitance c re (pf) collector to base voltage v cb (v) reverse transfer capacitance vs. collector to base voltage 2 1 0.5 0.2 0.1 0 1 5 1 0 2 2 v ce = 3 v collector current i c (ma) base to emitter voltage v be (v) collector current vs. base to emitter voltage 100 10 1 0.01 0.001 0.1 0.0001 0.6 0.5 0.4 0.7 0.8 1.0 0.9 v ce = 1 v collector current i c (ma) base to emitter voltage v be (v) collector current vs. base to emitter voltage 100 10 1 0.01 0.001 0.1 0.0001 0.6 0.5 0.4 0.7 0.8 1.0 0.9 v ce = 2 v collector current i c (ma) base to emitter voltage v be (v) collector current vs. base to emitter voltage 100 10 1 0.01 0.001 0.1 0.0001 0.6 0.5 0.4 0.7 0.8 1.0 0.9 ne68518 /
d a t a s heet p u 10403e j 01v 0 d s 4 2 s c 5015 v ce = 3 v i c = 10 ma frequency f (ghz) insertion power gain, mag vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) 50 40 30 20 0 10 0.1 0.2 0.5 1 2 5 mag |s 21e | 2 v ce = 3 v f = 2 ghz collector current i c (ma) insertion power gain vs. collector current insertion power gain |s 21e | 2 (db) 12 10 6 8 0 2 4 1 5 10 20 0 5 2 v ce = 3 v f = 2 ghz gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current 14 0 2 4 6 8 10 12 2 5 10 20 0 5 1 1 000 100 10 1 0 0 1 0 1 1 . 0 dc current gain h fe collector current i c (ma) dc current gain vs. collector current v ce = 1 v 1 000 100 10 1 0 0 1 0 1 1 . 0 dc current gain h fe collector current i c (ma) dc current gain vs. collector current v ce = 3 v 1 000 100 10 1 0 0 1 0 1 1 . 0 dc current gain h fe collector current i c (ma) dc current gain vs. collector current v ce = 2 v ne68518 /
d a t a s hee t p u 10403 e j 0 1 v 0 d s 5 2 s c 501 5 5 0 1 2 3 4 0 2 0 1 1 5 0 5 2 collector current i c (ma) noise figure vs. collector current noise figure nf (db) v ce = 3 v f = 2 ghz r ema r k t h e graph s indica t e n o m inal c hara c t eris t i c s . s- param eter s ne68518 /
d a t a s heet p u 10403e j 01v 0 d s 6 2 s c 5015 package dimensions 4- pin super minimo ld ( 18) ( unit: mm) pin connections 1. collector 2. emitter 3. base 4. emitter 0.9 0.1 0.15 +0.1 ?0.05 0.3 0 to 0.1 t83 3 1.30 2.0 0.2 1.25 0.65 0.60 4 2 1 2.1 0.2 1.25 0.1 0.65 0.65 0.4 +0.1 ?0.05 0.3 +0.1 ?0.05 0.3 +0.1 ?0.05 0.3 +0.1 ?0.05 ne68518 /
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